Dr. Zhang Kai, the key laboratory, published in the international semiconductor device authoritative journal "High-Linearity Algan / Gan Finfets for MicroWAVE Power Applications", "3D fin GaN high linear microwave power devices" The famous semiconductor industry "Semiconductor Today" has been reported by columns and is concerned from domestic and foreign industry.
"SEMICONDUCTOR TODAY" report screenshot
Dr. Zhang Kai's paper focused key laboratory has recently obtained several important breakthroughs in GaN high linear technology, and innovates three-dimensional Gan FinFET microwave power devices, overcomes the bottleneck of GaN plane devices, greatly improves cross-conversion flatness, substantial improvement GaN device linearity, while maintaining high output power and efficiency, laying the foundation for the next generation of mobile communications high-performance components. This result is also the first time to show the advantages and potential of GaN three-dimensional devices with respect to the two-dimensional device in microwave power applications, which strongly promotes the practical process of GAN 3D devices. The development process of the results will be supported by the National Natural Science Foundation of China.
High linear GaN FinFET devices and cross-guiding properties proposed by NEDI
Semiconductortoday is headquartered in the UK's independence and non-profit international semiconductor industry famous magazines and websites, focusing on important research progress and the latest industry dynamics of compound semiconductor and advanced silicon semiconductors, and has strong industry influence.
CETC Fifty-fifth Institute is one of the research, development and application of my country's large-scale electronic devices, has a national key laboratory of gallium microwave millimeter waves and module circuits, and the National Plate Display Engineering Technology Research Center is mainly engaged. Development and production of various devices, circuits, components, and machine systems in the fields of microelectronics, optical electronics, vacuum electronics, and MEMS. For my country's national defense industry, the biggest contribution is more developed T / R component, that is, the radio transceiver module is mainly used in various phased-controlled radar, including fighter fire control radar, early warning machine, "China God Shield" And air defense radar, etc.
In addition to the radar infrastructure design of the phase-controlled radar, the effect of the T / R component performance of radio transceiver on radar transceiver is also very large. At present, the international mainstream T / R component type has two kinds of gallium arsenide and gallium nitride. Among them, gallium nitride is emerging things in recent years. It is not preferentially applied to radar radiofrequency and other equipment, and radio communications also requires high performance. Gallium nitride semiconductor assembly.
The same is the KLJ-7A phase-controlled strands produced by the Sino-Power Group 14, and up to 1000 T / R components are installed.
As a unit that is responsible for the R & D research and development of T / R components, the fifty-fifth is broken through gallium T / R, and continues to develop gallium nitride T / R components for the Chinese defense industry after the establishment of gallium T / R. However, due to material characteristics, the gallium nitride T / R components of the new life will have some problems that have not been encountered. In addition to the use of diamond as a substrate material to improve thermal conductivity, reduce component power consumption, three-dimensional Gan FinFET's application can be said to be another way.
Under the current semiconductor industry, under the trend of various three-dimensional structural chips, introduce a three-dimensional structure, improve the GaN two-dimensional device into a three-dimensional structure, can be said to be a big innovation. Simply put, the same power consumption, volume T / R component will provide a more accurate radar waveform and higher radio frequency power, and further improve the basic performance of radar without increasing external energy consumption.
This article originally address: https://www.eeboard.com/news/gan/
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