JFET gate Ground preamplifier ----- JFET Preamplifier

JFET gate ground front amplifier, JFET Preamplifier Keywords: front amplifier, front amplifying circuit, MOST FET, 2SK125 Fig. 1-1 is an example of the engagement FET 2Sk125 (SONY) gate to ground amplifying circuit, and the electrode of 2SK125 is in the center of the gate, so that when the gate is grounded, the ground electrode is utilized on the printing copper foil. The input and output can be separated. The power gain of the circuit is approximately 10 ~ 12dB, NF is about 2dB. The LC value in the circuit is different from frequency. To select the value of Table 1-1, L1, L2 is a polyhydramine line of about 0.3 ㎜ on the toroidal core, direct inserted directly on the substrate. On the other hand, there will be no stray capacitance production, and the power supply path is installed 2 ~ 3 0.001μF long-distance capacitors can make the circuit move more stable. The resistance value of the place to be adjusted, so that the boiler current is approximately 10mA, in addition, adjusting the Trimmer Condenser can make the feeling of the best point, but the maximum point of the gain and the best point of NF are inconsistent. Therefore, it is usually the best point to adjust the NF value.

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