5G acceleration, related radio frequency devices will receive $ 6.492 billion next year.

According to the report of the Tuang Industrial Research Institute of the Citang Consultation, due to the functional demand of the current RF front-end device manufacturer due to the functional requirements of the mobile phone communication device, the production materials of the device were gradually developed as 5G construction, RF devices The amount of use is doubled than the 4G era, which is expected to drive the GaAs RF device market in 2020 to enter a new wave of growth. Tiben Industrial Research Institute pointed out that due to the characteristics of radio frequency front end device, it contains high-voltage, high temperature and high frequency use, with high demand in 4G and 5G era, and traditional Si devices such as HBT and CMOS have no satisfaction, manufacturers are gradually Transfer your eyes to the GaAS compound semiconductor. The GaAS compound semiconductor is particularly suitable for use in high-frequency transmission fields applicable to wireless communication than Si devices than Si devices with its own electron mobility, with anti-interference, low noise and high voltage resistance. Since the range of mobile phone communication frequencies in the 4G era has been made to 1.8 ~ 2.7GHz, the traditional 3G Si RF front-end device is not used, and the 5G Tong market is entering the high-speed growth period, and the frequency band will be more wide (including 3 ~ 5GHz, 20 ~ 30GHz), so that the current RF device will gradually be replaced by Gaas, whether 4G or 5G communication applications. If the current market is developing, the second half of 2018 has been declining mobile phone sales, China-US trade warfare, impact GaAS communication device IDM factory camp, estimated 2019 IDM factory total camp will fall to 5.835 billion US dollars, year Decimate by 8.9%. However, as 5G communication continues to develop, the number of RF front-end devices will be significantly improved, such as power amplifier (PA) usage, 2 of 3G era, 5-7, 16, 16, will Driving the overall revenue growth in 2020, and the GAAS RF front-end device is expected to receive $ 6.492 billion, an annual increase of 11.3%. Overall, as countries continue to invest in the construction of 5G base stations and other infrastructure, it is estimated that the peak will be reached in 2021, 2012, plus the number of RF front-end devices doubled by 4G times, will be expected to drive IDM large factory Skyworks (thinking Jiaxun), Qorvo (Wei Xun) new wave camp growth kinetic energy, and Taiwan factory radio foundry manufacturing is stable, Hongjie and Huanyu, etc., will also obtain orders with IDM factory expansion, gradually get rid of camp The haze of recession.

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