About 1700V All SIC Power Module Analysis

BSM250D17P2E004 1700V with a high demand for pressure resistance New chip coating materials and process methods Insulated breakdown High temperature and high humidity HV-H3TRB Top-on resistance is reduced by 10% RoHM has been used for industrial equipment-leading inverters and converters, developed in industrial-leading * reliability, rated value to ensure 1700V / 250A full SiC power module " BSM250D17P2E004 ". * As of 26 October 2018 Rohm survey data 1700V withstand voltage full SiC power module with high demand In recent years, since the energy saving effect of SiC products is excellent, the application of SiC products mainly in automobile and industrial equipment is increasingly widely used in the fields of automobile and industrial equipment. The system has a high voltage development trend, and the demand for 1700V withdrawal resistance is increasingly strong. However, 1700V pressure-resistant products are affected by factors such as reliability, and it is difficult to launch SiC products, which is currently mainly used by IGBT. The 1700V module developed by this development adopts new coating materials and new process methods, successfully prevents insulation breakdown and inhibits the increase in leakage current. Further, in the high-temperature and high humidity test, it exhibits extremely high reliability, and there is no insulation breakdown in more than 1,000 hours, thereby successfully launched a full SiC power module of 1700V / 250A. Ensure industry leading reliability in high temperature and high humidity environments 1700V All SiC Power Module BSM250D17P2E004 By adopting new coating materials as a chip protection countermeasure, introducing new process methods, the module passes the high temperature and high humidity test (HV-H3TRB: High Voltage High Humidity High Temperature Reverse Bias). The HV-H3TRB high temperature and high humidity test was performed on the BSM250D17P2E004 and the equivalent IGBT module, and the test conditions were 1360 V at a high temperature and high humidity environment of 85 ° C / 85%. The test results are the IGBT module compare the increase in leakage current caused by insulation degradation or insulation breakdown in the IGBT module, which has failed within 1,000 hours. The newly developed SiC power module does not have insulated breakdown even more than 1,000 hours, exhibiting extremely high reliability. Lower on-resistance, helps further reduce equipment loss The SiC SBD (Schottky Barrier Diode) and SiC MOSFET constituting the BSM250D17P2E004 were produced by RoHM. The conductive resistance is lower than the equivalent ordinary product by the best combination of SiC SBD and SiC MOSFET. This will be very helpful to further reduce the energy consumption of the application. Product lineup of SiC power module, reading

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