The spin Hall effect is an important way to produce pure spin current, as a core spintronics, has been applied and the high-density information storage devices such as high-sensitivity magnetic sensor. Once correlation (a magnetic spin Hall effect) and the magnetization direction of the spin flow, which makes control of the spin current obtained greatly facilitated. Antiferromagnetic material does not occur because of the magnetostatic coupling, the advantages of high intrinsic frequency (THz band) and anti-magnetic field interference, have broad application prospects in ultra-fast, ultra-high density information storage field and high-frequency electronic devices . If you can manipulate to regulate its magnetic moment antiferromagnetic spin Hall effect, not only can enrich the connotation of physical spin Hall effect, it is also possible to provide for the construction of a new ultra-fast, ultra-high density, low power consumption information storage devices opportunity.
Tsinghua feature film material and research team after years of efforts, in a local spatial inversion symmetry breaking Mn2Au linear antiferromagnetic film (there is no time-reversal symmetry breaking), successfully observed antiferromagnetic spin Hall Seoul effects. Relevant results February 25, 2021, published online in "Nature Materials •" Tsinghua University School of material for the first complete unit, National University of Singapore, Lanzhou University, Beijing University of Technology, Huazhong University of Science and Technology and Hong Kong University of Science and Technology and other units to work together to complete .
Figure 1. Mechanism FIG outer surface of the spin-polarized spin current through the antiferromagnetic spin Hall effect. When the current is in the direction of the anti-ferromagnetic torque, the carrier spin and the local space in which the anti-ferromagnetic magnetic magnetic magnetic magnetic magnetic magnetic magnetic magnetic magnetic magnetic magnetic magnetic magnetic magnetic magnetic magnetic magnetic magnetic magnetic magnetic magnetic magnetic magnetic magnetic magnetic magnetic magnetic magnetic magnetic magnetic magnetic magnetic magnetic magnetic magnetic magnetic magnetic magnetic magnetic magnetic magnetic magnetic magnetic magnetic magnetic magnetic magnetic magnetic magnetic magnetic magnetic magnetic matrix are interaced vertically. Facating effort (-M × H) generates spin polarization. Since Mn2Au sublattice local symmetry breaking (H and M are two in the reverse sublattice), the spin-polarized exactly superimposed on the two adjacent sublattice. As will be appreciated, the spatial inversion of sublattice breaking antiferromagnetic interaction with magnetic moment produces an outer surface of the net spin polarization. This process does not need to break the time reversal symmetry.
Figure 2. The spin torque - the outer surface of the spin-polarized ferromagnetic resonance characterization and manipulation methods using electrical and magnetic moment associated outer antiferromagnetic spin polarization plane. By spin torque - ferromagnetic resonance (ST-FMR) discloses a technique of spin flow coexist in the spin-polarized in the plane Mn2Au and outer surfaces. On the basis of previous work (XZ Chen, et al, Nature Materials, 18 (2019) 931;.. XF Zhou, et al, Physical Review Applied, 9 (2018) 054028), using iron shells from the ferroelectric substrate strain or current driving Mn2Au antiferromagnetic film magnetic moments in the plane of rotation, so that the antiferromagnetic magnetic moment direction perpendicular to the direction of the current tendency, the outer surface of the spin-polarized at this time is greatly impaired. Conversely, if the magnetic moments tend to parallel the direction of current, the outer surface of the spin polarization will be enhanced, thereby achieving the spin Hall effect is regulated by manipulating the antiferromagnetic magnetic moment effect.
FIG 3. Mn2Au / ferromagnetic zero field inverting system. When the current plane magnetization easy axis parallel to the current-driven magnetization switching has the advantage of high speed, and the vertical system of easy magnetization in favor of high density information storage and low power consumption. Thus for current induced in the two configurations zero field inversion has important application value. The synergistic effect of spin polarization of spin polarization with the inner surface of the outer surface of the conventional obtained to achieve zero field inversion ferromagnetic layer and an adjacent Mn2Au (easy magnetization or perpendicular magnetization easy film inner surface). Further, since the outer surface of the spin-polarized spin current is considered to be an effective way to a perpendicular easy magnetization switching magnetic thin film to improve the efficiency, the results of the current study is expected to be the third generation to improve the magnetic random access memory (SOT-MRAM) working efficiency One solution. This work is based on local spatial Mn2Au inversion symmetry breaking, the outer surface of the observed spin polarization of the spin current, found antiferromagnetic spin Hall effect, which can be achieved by manipulating the magnetic moment antiferromagnetic effective regulation of spin currents. Using the obtained outer surface of the spin polarization, field inversion and achieve zero Mn2Au adjacent ferromagnetic layers.
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