As the user's demand, the demand of portability is improved, the GaN fast charge market scale will rise rapidly. It is expected that the global GaN charger market is 2.3 billion yuan. It will rise rapidly to 63.8 billion yuan in 2025. The average annual growth rate of composite is as high as 94%. At the same time, both comprehensive performance and cost, GaN is also expected to become the mainstream choice of fast-charged devices in the consumer electronics field in the future, and the charging market is only the "Icebergage" of GaN applications.
Xiaomi recently released the annual flagship mobile phone millet 10, synchronous launched a Type-C 65W Ga charger in the price of 149 yuan, successfully attracted investors, the next day, listed company San'an Optoelectronics, Hide High-tech, Fu Man Electronics , Yunnan's germanium, Shlanny and other related concepts have got bigger rising.
Real demand OR marketing
According to the Chairman of Xiaomi Group and CEO, GaN is a new type of semiconductor material. The charger has been particularly small, but the charging efficiency is particularly high, low heating, and is compatible with the laptop. Xiaomi GaN 65W charger compared to standard 65W charger volumes of half, filled with Xiaomi 10 Pro with 4500mAh batteries for 45 minutes. Also charge the iPhone 11, the GaN charger is twice as fast as the original.
In fact, Xiaomi is not the first mobile phone manufacturer that publishes GaN charger. As early as November last year, the Reno ACE mobile phone released by OPPO was equipped with a GaN charger.
In addition, Huawei, Samsung, Apple also has a deeper accumulation in GaN technology, Haisi, ZTE micro-electronics, etc., according to industry insiders, this year Huawei, Vivo mobile brand manufacturers will also introduce GaN chargers.
According to market research institutions Yole estimation, in 2024, the gallium nitride market can reach 358 million US dollars only in the mobile phone and notebook fast-billed field; in optimism, the gallium nitride power market will exceed $ 750 million.
However, there are insiders who have used the GaN charger that the volume of the GaN charger is not too much compared to Si, and the heat is high. At the same time, many netizens believe that this 65W GaN charger is just a marketing of mobile phone manufacturers.
As a joint construction unit of the National Coordination Semiconductor Engineering Research Center, Yicheng has achieved substantial breakthroughs in research and development of GaN integrated circuits. Yu Yuanqiang, Ya-branch, said that GaN high frequency, high temperature, and anti-irradiation characteristics are relatively wide. The fast charge is the ACDC power supply application involves the drive chip and GaN power devices.
Yu Yuanliang further pointed out that Yichen is a driving chip, which is to design the driver IC of GaN power devices. The driving IC's pursuit is high power density, and output power is proportional to the switching frequency and inductance, so I hope there is more The high switching operation frequency is interested in the high-frequency characteristics of GaN. At present, the fast charge power supply is basically working in a 100KHz switching frequency. If the GaN power device is used, the switching frequency is increased to 1 MHz (1000kHz), and the switch operating frequency is 10 times. However, we can reduce the inductance by 10 times, then the fast-charged transformer volume is greatly reduced (the current transformer volume is one of the key to improving power density). At the same time, GaN's switching loss and RDSON have a significant advantage over VDMOS, which is helpful for power efficiency.
It can be seen that the GaN charger does achieve higher power, smaller volume, and higher conversion efficiency. For consumers, it can be more convenient to carry and charging faster, which will become an important direction of charger upgrade.
It is worth mentioning that Yu Yuanqiang frankly, the current phase driver IC is a little difficult, but the Si process is mature and difficult.
Talking about the current status of Ga, Yu Yuanqiang said that there is no mass production conditions in China, due to the incompetent GaN industry chain, the silicon-based GaN material and GaN crafts are immature, PI, Nai Micro (company with millet cooperation GaN company Companies that do the driver ICs, and the company that drives ICs in Taiwan's founders such as Tajimad, Han Lei. However, the Silicon-based GaN power devices made by the Taiwan foundry are also depleted, the operating frequency is very low, and only the low RDSON (on-resistance) characteristics of GaN. Therefore, the current sub-micro-power density scheme is CoolMOS.
The gathering network interviewed a number of industry insiders that the GaN power devices market is not big. For mature Si, the GaN industry chain is not mature, high prices, reliability, cost, etc. Sexual advantage. Currently, the English-flying GAN field is also a COOLMOS program in the fast charge market.
What are the listed companies in China?
From the above, it knows that although the current GaN industry chain is not mature, it does have advantages such as high frequency, high power, broadband wide, low power, small size.
In addition to the application in fast charge, GAN is usually used in three fields of microwave overser, power electronics, and optical electronics, 5G communication, radar warning, satellite communication, etc. The power electronics, including smart grid, high-speed rail transit, new energy vehicle, consumption Electronics and other applications; optical electronics include LEDs, lasers, photodetectors, and the like applications.
Given the vast market prospects, Wentai Technology, San'an Optoelectronics, Hide Highway and other domestic listed companies have also layout the GaN industry chain.
Wentai Technology's Anshi Semiconductor is the world's largest IDM standard device semiconductor supplier, according to An Shi Semiconductor official website, the company introduces a gallium nitride effect transistor (Ganfet), which is mainly used in industrial power, inverters, converters. Scenes such as automotive traction inverters and car chargers and converters.
San'an Optoelectronics San'an Integration is a foundry specializing in compound semiconductor manufacturing, serving radio frequency, millimeter wave, power electronics and optical market, with substrate materials, epitaxial growth, and chip manufacturing capabilities. The official website shows that San'an Integrated 4-inch, 6-inch compound wafer manufacturing lines have been built in the microwave RF field, and the SiC power diode and silicon groups of high-reliability, high-power density have been introduced in the field of electronic circuitry. Gallium nitride power devices.
On February 17, Wanwei Technology said on the interactive platform that the company's gallium nitride business involves epitaxial and devices, but as of now, it is still in its infancy, and is in contact with different customers / potential customers.
On February 19, Haise high-tech said on the interactive platform, the company's key direction is photoelectric, base station chip, power electronics. The company has achieved breakthrough in siliconyl nitride power electrons in 2019, and the two most important directions of the future is the MOS technology of silicon-based gallium gallium nitride and silicon nitride. The company has developed a gallium nitride process of 0.25-0.5 μm, which is developing a gallium nitride process for higher frequencies.
On February 21, Fenghua High Class said in the interactive platform that the company GaN gallium nitride semiconductor product business is in the development phase; super capacitors have not yet scale production.
On February 21, Jiejie Micro Electricity said on the interactive platform that the company has cooperated with the China Academy of Microelectronics Institute and Xi'an Electronic Science and Technology to develop semiconductor devices representing third-generation semiconductor materials, as of 2020, February 21. On the 20th, the company has 2 utility model patents related to gallium nitride. In addition, the company has 3 invention patents, and 1 utility model patent is still in the application acceptance.
On February 18, Taichi Shares expressed in the interactive platform, power electronic technology has different new months, developing fast, company continuous tracking and research, representing SiC (silicon carbide) and GaN (gallium nitride), a third-generation wide-to-strap semiconductor Materials and device technology, enhance core competitiveness, and promote company strategy development.
On February 21, Hai Neng Industrial said on the interactive platform. The company currently uses the product of gallium nitride technology mainly for travel charger and charging station (four-port and multi-port charger), including single USB Type-C charging. Merry, Dual USB TYPE-C charger, USB TYPE-C + USB TYPE-A double charger, multi-cart, etc .; more than ten products that have been transferred in this type of charger have been sold in the market; In the middle, but the company is ODM manufacturing plant, and it is not allowed to disclose customer brand information.
On February 21, Mant Chi Shares said on the interactive platform, Mant Chi semiconductor can complete the entire production process of "sapphire flat → patterned substrate PSS → LED episodes → LED chip", gallium nodule, can provide A comprehensive chip solution.
On February 21, Zhongheng Electric said on the interactive platform that the company has applied GaN power devices in communication power supply, and the performance of GaN is not market mainstream and cost is relatively high, but the company will be based on product requirements And apply scenarios to choose the most suitable components, making high quality products and integrated solutions.
On February 21, Polycast Optoelectronics said on the interactive platform that the company's main products are GaN-based high brightness Blu-ray LED chips and epitaxial sheets.
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