Yesterday, CREE, who recently entered the semiconductor business, will invest 1 billion US dollars, expand SiC silicon carbide production capacity, which will accelerate the transformation from Si silicon to SiC silicon carbide, meet EV electric vehicles and 5G market demand. Cree said that the production capacity expanded will bring 30 times greater growth in the production capacity of SiC silicon carbide wafers and 30 times greater growth in SiC silicon carbide materials to meet the expected market growth prior to 2024.
Cree said they built an automated 200mm SiC silicon carbide production plant with the most advanced technology in Dharham, USA, USA, USA, USA, USA, China. This marking the company's largest investment will provide kinetic energy for WolfSpeed SiC silicon carbide and GaN-ON-SiC silicide. After all of them were completed in 2024, these plants will greatly enhance the company's SiC silicon carbide material performance and wafer manufacturing capacity, which makes the use of huge technologies in automotive, communication facilities and industrial markets.
Mr. Greg Lowe, Cree, said: "We are constantly seeing the great benefits produced by SiC silicon carbide in the field of automobile and communication facilities. However, existing supply is far from meeting our SiC silicon carbide needs. Today, we announced the biggest investment in production manufacturing so far, which will greatly enhance the supply to provide transformation products and services for customers. This in terms of equipment, infrastructure, company human resources Huge investment will be significantly expanded to us. Compared with the first quarter of fiscal 2017 (that is, we started to expand the first phase of capacity), 30 times growth and material production of SiC silicon carbide wafer manufacturing capacity can be produced. 30 times increase. We believe this will make us satisfy the WolfSpeed SiC silicon carbide materials and devices in the next five years and even longer expected growth. "
Cree further pointed out that this plan will provide additional capacity for the industry's leading WolfSpeed SiC silicon carbide business. By adding existing architectural facilities, the first step in meeting the expected market demand is taken as an area of 253,000 square feet of 200 mm power and RF RF wafer manufacturing plant. The new North Fab will be designed to fully meet the automotive certified factory, and the wafer area provided by the production will be 18 times today, and the production of 150mm wafer will be carried out during the beginning. The company will transform the existing production and material plants in Darham into a material super factory.
Mr. Greg Lowe, Cree, also said: "These SiC silicon carbide manufacturing super plants will accelerate the innovation of today's fastest growing market. By providing solutions, help increase the mileage of EV electric vehicles and reduce charging time, while support The 5G network is deployed around the world. We believe this represents SiC silicon carbide and GaN gallium nitride technology and manufacturing have the biggest capital investment in history, and is also a responsibility in finance. By adopting existing plants and installations Most of the new tools, we believe that we can achieve the 200mm FAB of the most advanced technology, and the cost is approximately 1/3 of the new FAB. "
Inadvertently, another SiC large factory with full supply chain advantage has also released their expansion plan before earlier.
Roma issued a press release early before, Rom announced that the use of silicon carbide (SiC) power control chip capacity used in electric vehicles (EV), will be produced after the production of subsidiaries "Rohm Apollo" (Fukuoka Prefecture) The new plant is built, it is expected to start in February 2019, completed in December 2020. In addition, Rom is in the SIC Power Control Chip Business Strategy Description, which will invest about 20 billion yen. In 2020, the SiC power control chip can carry out capacity, and Rom is also considered to increase production investment in Miyazaki County, in 2025 3 The total amount of investment will invest 60 billion days ago, the production capacity of SiC power control chip is increased to 16 times in 2016.
In addition, Japan's Showa Electric has also published a production capacity expansion statement. The company announced the increase in SiC wafer in January 2017, but due to the sharp growth of the SiC power supply control wafer market, in order to respond to the demand from the customer, it is determined that the SiC wafer is 3 degrees. Increase investment. Showa Electric SiC Waze Month Production Can increase from 3,000 pieces to 5,000 (first increase yield) in April 2018, and will further increase to 7,000 pieces in September this year (second increase production), and the 3rd degree After the increase in production, it will be increased to 9,000 pieces in February 2019, and 1.8 times the current (5,000 pieces).
In addition to the expansion of wafers, the downstream foundry is also accelerating the layout, greeted the upcoming SiC boom.
X-Fab announced in September last year that it is planned to have a capacity of 6-inch SiC craft factory in Texas to meet the growing demand for efficient power semiconductor devices. In order to double the capacity, the X-Fab Texas factory purchased a second heated ion injection machine for manufacturing a 6-inch SiC wafer. It is expected to be in time in the first quarter of 2019 to meet the expected recent demand.
X-Fab Texas Factory Lloyd Whetzel said: "With the increasing popularity of SiC, we have long understood that improving ion implantation is the key to continuous manufacturing in the SIC market. But this is only for specific SIC manufacturing process improvements The overall capital plan is the first step. This reflects the commitment of X-Fab on the SiC industry and maintains our leadership in the SIC casting business. "
Han Lei from Taiwan, my country, also announced in August last year that it decided to expand the silicon carbide (SiC) production capacity, and the Board of Directors felted 340 million yuan to build a 6-inch SiC production line, and the first to amplify SiC in Taiwan. Operating works in capacity, it is expected to launch a test production in the second half of next year. It is understood that Han Lei has established a 4-inch SIC process monthly capacity of approximately 1,500 pieces. It is expected to change some of the production lines of the existing 6 inch Crystal Plant to the SIC process production line, first establish the process to meet the vehicle, industrial control products and other customers. Demand, due to 6 吋 SiC price reached 4,000 US dollars (about 120,000 Taiwan), it is estimated that only 2000 to 3,000 pieces per month are estimated, and revenue can increase by more than 23 billion yuan.
In terms of chip factory, it is a strong battle for the company to expand his forces in the power of semiconductors, Rom, Yingfailing and Li Te, and a competition.
(Source: observation of semiconductor industry)
New product:
This thing is easy! No hardware driver or embedded development, suitable for Win10 IoT Core and Azure platforms
Small packaging, low power consumption, integrated model processing IC and 12 ADC, feel very powerful
Yadenno's evaluation board is compatible with Arduino interface, and also with an LCD screen. It is more choices for developing designers.
Powerful, 600V power device quality factor, set new power conversion benchmark
Be
Recommended activities:
Participation Award | MPS Power Symposium Hangzhou Station, at least 100 yuan reward
Registered Award | Summit you invite you to register your account, experience diversified devices to buy
Mouser helps graduation season, subscribed for 1,75 yuan can apply for 100 yuan subsidy
[Group purchase] 21 blocks can buy the five organs of the Internet of Theton Development Board Particle Photon
Be
Invite you to join the panel engineer group (group number 135513647)
More activities, consultation, technical exchange
Our other product:
