"Transistor, full name should be a semiconductor transistor, also known as a bipolar transistor, a transistor, a semiconductor device for controlling a current whose effect is to amplify the weak signal into an electrical signal the amplitude value is large, but also as a non-contact switch.
Is one of the basic components of a semiconductor transistor having a current amplification, is a core element of an electronic circuit. Transistor is formed on a semiconductor substrate, a PN junction two closely spaced, the two PN junction semiconductor block is divided into three parts, the middle part of the base region, the emitter region is both side portions and a collector region, there PNP arrangement and NPN two kinds.
Common transistor models
9011: In addition to an outer tube or an audio low noise variable amplifier of the first long tail in multiple dedicated discharge tube Nagao - extends to close even if the current is still not 0. off variable magnification - ER.. small. increasingly smaller magnification. if used almost everyday in the first tube discharge only a dedicated pipe
9012: PNP
9013: NPN, Ic = 500mA, medium power, low frequency, can promote the common audio output of the power amplifier
9014: NPN, Ic = 100mA, MHz, low power, low frequency, low noise amplification
9015: PNP
9018: NPN, Ic = 50mA, fT = ~ 620 ~ 1100 MHz, low-power, high-frequency, low noise, low current
8050: NPN, Ic = 1000 ~ 1500mA, high-frequency amplifier, slower speed, the power control, the power amplifier circuit pairing small tube, small electronic products, high-frequency circuit, and the common phone
8550: PNP, Ic = 1000 ~ 1500mA, high-frequency amplifier, slower speed, the power tube
2N3904: NPN,
2N3906: PNP, Ic = 200mA, low power tube, faster, particularly small delay, by the maximum current is 200mA, It is a 200 mA, 40 V, 625 mW transistor with a transition frequency of 300 MHz, [ 4] with a minimal beta, or current gain, of 100 at a collector current of 10 mA. It is used in a variety of analog amplification and switching applications. The 2N3904 is used very frequently in hobby electronics projects, including home-made ham radios, code-practice oscillators and as an interfacing device for microcontrollers.
2N2222: NPN, Ic = 500mA, can be done with 2N2907 / 2N2907A PNP pipe complementary symmetry tube used, common NPN bipolar junction transistor (BJT) used for general purpose low-power amplifying or switching applications It is designed for low to medium current,. low power, medium voltage, and can operate at moderately high speeds. It was originally made in the TO-18 metal can as shown in the picture
2N2907: PNP,
2N5551: NPN, Ic = 600mA, VCEO = 160V, high back pressure transistor, the main purpose is 1) to make high-voltage switching tube, 2) to make the power amplifier, 3) do Video Amplifier
2N5401: PNP
BC184: NPN, VCEO = 30V, Ic = 500mA, ICBO = <15nA, general small signal amplification
BC550: NPN, VCEO = 45V, Ic = 100mA, ICBO = <15nA, general small signal amplification
BC560: PNP, VCEO = -45V, Ic = -100mA, ICBO = <15nA, general small signal amplification
MMBTA63, LMBTA63, SMBTA63: PNP, Darlington, Ic = -500mA, VCEO = -30V, hFE = 5k ~ 10k
MPSA64, MMBTA64, LMBTA64, SMBTA64: PNP, Darlington, VCEO = -30V, Ic = -100mA, hFE = 10k ~ 20k,
MPSA14, KSP14: NPN, Darlington, Ic between 0.1 ~ 100mA hFE of 10,000 to 40,000, 80mA at maximum .hFE significantly increased with increasing temperature, low-noise signal amplification minute
KSP13: NPN, Darlington, Ic = 500mA, VCEO = 30V, hFE = 5k ~ 10k
MPSA18: NPN, ICBO = <15nA, low-noise signal amplification minute
MPSA92: PNP, VCEO = -300V, Ic = -30mA, high pressure low signal amplifier
MPSA42: NPN, VCEO = 300V, Ic = 30mA, high pressure low signal, consisting of the tube amplifier and MPSA92
FMMT734: PNP, Darlington, Ic = -800mA, VCEO = -100V, hFE = 20k ~ 60k, high-current high negative pressure Darlington large magnification, Ic 1 ~ 100mA at between 75,000 hFE maintained at room temperature. hFE increases significantly with increasing temperature
FMMT634: NPN, Darlington
MPSA series of small signal transistors
The main parameters of the triode
Selection transistor need to understand the main parameters of the transistor, the transistor limit of four parameters: Icm, BVCEO, Pcm and fT is the most basic, and the other, but also understand the transistor characteristic frequency, noise and output power.
Icm is the maximum allowable collector current, the transistor operation, when the collector current thereof exceeds a certain value, he will decrease the current amplification factor β. For this purpose three predetermined change current amplification factor β is not more than the maximum allowable value of the current collector is referred Icm. Therefore, in use when the collector current Ic exceeds Icm not destroy the three tubes, but will reduce the value of β, affect the performance of the circuit;
BVCEO is a triode base open, the collector - emitter reverse breakdown voltage. If the applied voltage between the collector and emitter exceeds this value during use, it may cause the transistor to have a great current collector, a phenomenon called breakdown. Cause permanent damage or deterioration after the transistor breakdown;
Pcm is the maximum allowable collector power dissipation. Transistor work, the collector current in the collector-collector junction transistor generates heat so that heat. If the power dissipation is too large, the transistor will burn out. If the transistor is greater than Pcm work longer in use, it will damage the transistor. Note that the high-power transistor given the maximum allowable power dissipation are all parameters under certain specifications radiator case in Canada. Use must pay attention to this.
Characteristic frequency fT. As the operating frequency increases, amplification capability of the transistor will decrease, corresponding to β = frequency fT 1 at a characteristic frequency called triode
Characteristic frequency fT. In the design and production of electronic circuits is that for high-frequency amplification, intermediate frequency amplifier, oscillator circuits the transistor should be chosen between very small capacitance transistors, and it should be 3 to 10 times the characteristic frequency of the operating frequency Fr. The wireless microphone should be selected from the produced characteristic frequency greater than 9018 600NHz transistor or the like.
Selecting values β (Hfe) a. In the selection transistor, it is generally desirable β value selected bigger, but it is not the bigger the better. β value is too large, easy to cause self-excited oscillation (self-generated interference signals), in addition to the high value of β is generally not stable operation of the tube, a large affected by temperature. Typically, the value of β is selected in the silicon tube of 40 to 150, the value of β is selected from germanium tube 40-80 is suitable. Circuit in terms of the entire electronic product, the value of β should also be selected from the mating levels. For example, in the audio amplifier circuit, with a lower value if the first stage, the stage can be used after the value of β a lower tube. Conversely, if the preceding stage tube β value is low, then the stage with the high value of β. Symmetrical circuit, if not very B push-pull power amplifying circuit and bistable switches like astable circuit, and the need to use two β value Iceo same value as the transistor, or signal distortion occurs.
Selecting the noise and output power. In the production of low-frequency amplifier, the noise and the main consideration parameters such as output power transistor. Should be chosen smaller current Iceo penetration tube, because the smaller Iceo better temperature stability of the amplifier. In the low-level circuit, if employed, a low-power complementary push-pull on the tube, which should be less than or equal to the power dissipation 1W, the maximum electrode current should be less than or equal to 1.5A, the maximum reverse voltage of 50 ~ 300V.
Common are 2SC945 / 2SA733,2SC1815 / 2SA1015 \ 2N5401 / 2N551 \ S8550 transistors 8050 and other models, should be selected according to specific requirements of the application may be. Complementary push-pull power amplifier circuit in the subsequent stage of the pipe used, should be used in large current, high-power, low-noise transistor, whose power dissipation is 100 ~ 200V. Commonly used high-power complementary to the tube SC2922 / 2SA1216 \ 2SC3280 / 2SA1301 \ 2SC3281 / 2SA1302 \ 2N3055 / MJ2955 models.
Transistor Selection Considerations
Should be selected based on the actual type transistor circuit, i.e., the transistor in the circuit should be consistent with the role of the function of the selected transistor.
Low frequency low power transistors generally operating at low signal state, mainly for the low frequency amplifying various electronic devices, the output power is less than 1W of power amplifier;
Mainly used in high-frequency low-power transistor operating frequency is greater than 3MHZ, less than 1W of power and high frequency oscillating amplifier circuit;
Is mainly used for low-frequency power transistor in 3MHz frequency Fr of the following features, the low frequency power is greater than 1W power amplifier circuit may also be used for high-current regulated power supply output to make adjustments in the tube, it is sometimes used in low-speed high-power switching circuit ;
Mainly used in high-frequency power transistor is greater than the characteristic frequency Fr 3MHz, high frequency oscillation power of less than 1W and the amplifying circuit;
Is mainly used for low-frequency power transistor in 3MHz frequency Fr of the following features, the low frequency power is greater than 1W power amplifier circuit may also be used for high-current regulated power supply output to make adjustments in the tube, it is sometimes used in low-speed high-power switching circuit ;
Mainly used in high-frequency power transistor is greater than the characteristic frequency Fr 3MHz, greater than 1W of power circuit, it can be used as a power driver, amplification, also be used for low-frequency power amplifier or switching regulator. "
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