Coopea launches low-basis dislocation 4H silicon carbide epitaxial sheet

On September 19, 2012, the market leader in Shanghai, China-LeD, Kui Rui Company, recently announced its latest low-base dislocation (LBPD) 100 mm 4H silicon carbide epitaxial sheet. The total base dislocation density of the epitaxial drift layer of the low-base dislocated material is less than 1 cm-2, causing the baseband dislocation capacity of the VF offset less than 0.1 cm-2. The launch of this new low-foundation fault material further refers to the continuous investment and innovation of silicon carbide materials for a long time. Johnpalmour, CEO of Cooperative Power Devices and RF (RF), said: "BiPolar) The development of the silicon carbide bipolar type (bipolar) device has long been subject to the forward voltage attenuation caused by baseband. This low-foundation dislocation material It can be used for high-pressure bipolar devices such as an insulated gate bipolar transistor (IGBT) and a shutter tube (GTO), and increase the stability of these devices. This latest achievement helps to eliminate high power devices commercialization Hold. " Silicon carbide is a high performance semiconductor material, which is widely used in the production of lighting, power devices, and communication device products, including LEDs, power conversion devices, and wireless communication RF power transistors. About Cree CRARE founded in 1987, is a US listed company (1993, Nasdaq: Cree), a world of LED extensions, chips, packages, LED lighting solutions, compound semiconductor materials, power devices, and radiofrequency Business and industry leader. The advantage of Kui Rui LED lighting products is reflected in the unique material technology and advanced white light technology in gallium nitride (GaN) and silicon carbide (SiC), with more than 1,300 US patents, more than 2,900 international patents and Nearly 390 Chinese patents (above include authorized and in review patents), which makes Coque LED products are always in the world's leading level. Cooperating lighting level high-power LED, has the advantages of high light efficiency, stability, long life. Co Rui provides customers with high quality and high-reliable light-emitting devices, and also provides customers with complete sets of LED lighting solutions. Cooperative silicon carbide metal oxide semiconductor field effect tube switching device (MOSFETSWITCH) is small, the temperature coefficient is stable, low leakage flow, short switching time, and Case-based SchottkyPowerDiode zero reverse Recovery of current, such that the Cased silicon carbide power devices are particularly suitable for power electronic systems for high frequency, efficient, high power density, high reliability requirements. Technology area Vishay new UVC light-emitting diode adopts ceramic / quartz substrate with long service life LED smart bulb with facial recognition functions can also provide WiFi! The world's first outdoor spacing, all black lamp Philips Lighting research and development new product "Master LED T8 lamp tube" Apple to teamed up to TSMC research and development microled screen | a sentence review hotspot