IDT new voltage variable fading unit provides linearity improvement than a gallium gallium gallium products up to 1,000 times

IDT announces its continuous expanding RF Variable Differential Filler (VVA) product line to add two new products, enabling the frequency coverage of IDT RF products to 1 MHz to 6 GHz. Like other members in the product range, F2255 and F2258 devices provide industry-leading low insertion loss and high linearity. IDT's voltage variable felt can provide analog voltage control for applications that require precise attenuation. The two new devices use compact 3 x 3mm, 16-pin TQFN package, insertion loss is only about half of the competitive solution, while IP3 performance is 1000 times more than 1000 times (30 dB) than competition arsenide (GaAs) devices (30 dB), And they all show DB linear (linear logarithmic) attenuation characteristics within the voltage control. The low insertion loss of these devices reduces the loss of RF links, while their high linearity increases the data rate of the system. These new devices match the currently popular chip size, ideal for base stations (2G, 3G, and 4G), microwave infrastructure, public safety, portable wireless communication / data devices, test / automatic test equipment (ATE), military systems, United Operation Wireless System (JTRS) and HF, VHF and UHF Radio and other applications. Chris Stephens, General Manager of the RF Division of Idt, said: "The Idt company-based RF product can provide very outstanding performance than the gallium-based ROL, such as the new device is improved in linearity. These devices are today. The market has a minimum of VVA products inserted in insertion, and has the best linear attenuation control characteristics. " By using silicon-based radio frequency semiconductor technology, the attenuator of IDT provides a reliable solution for replacing traditional arsenide semiconductor technology. IDT's silicon technology has better RF performance, more powerful electrostatic discharge (ESD) protection, better moisture sensitivity level (MSL), higher heat dissipation performance, lower current consumption, and silicon technology verified Advantages such as reliability. Compared with the pin-compatible GaAs competition, the F2258 has an input IP3 of 65dBm, while the GaAs competition is only 35dBM, the maximum attenuation slope (slope) is 33dB / V to 53DB / V, 6000MHz minimum return loss is 12.5dB 7dB The maximum operating temperature is 105 ° C for 85 ° C. The F2255 device supports frequency range is as low as 1 MHz and has a maximum attenuation slope of 33 dB / V. Both F2258 and F2255 have two-way RF ports, support 3V or 5V single positive supply voltage supply, and the operating temperature range is - 40 ° C to 105 ° C. Related reading: IDT introduces a new digital predistortion demodulator to provide industry-leading performance for cellular base stations IDT introduces a new series of clock buffers IDT launches industry first single-chip 5V wireless charging transmitter IDT Push Power Management Solution Applying to Intel® AtomTM Processors