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    Intel's new generation of arrogant memory is launched, will be compatible with DDR5 DIMM

     

    In this year's memory and storage day, Intel not only launched an enterprise SSD D7-P5510 / D5-P5316 based on the 144-story QLC NAND flash memory, but also the consumer SSD 670p, based on the new generation of pride media enterprise SSD P5800X, mix SSD H20, also brings a new generation of proud bubble memory (PMEM) messages. The birth of the proud memory memory is not to replace the traditional DRAM DDR series memory. Now it will not be in the future, but in combination, it is the bridge between the DRAM DDR memory and the NAND flash solid state disk, fill the two Included between capacity, performance, constitutes a complete storage system. Among them, proudly-lasting memory is connected to the CPU through a double data rate bus, which can directly load and store access at the speed of DRAM memory, and both non-volatile, combining the best features of DRAM memory, NAND storage. In June this year, Intel released the second generation of proudly-lasting memory PMEM 200 series, continued to be compatible with DDR4 DIMM morphology, single capacity 128/256 / 512GB, thermal design power consumption is 15/18 / 18W (about 3W more than the above generation) The memory can be selected from 1866/2133 / 2400 / 266MHz, with a bandwidth of 25%, and the data access speed is 225 times higher than the NAND flash. The second generation of proudly-lasting memory main partners third generation can be extended to strong (published Copper Lake and Ice Lake will be released), 12 slots per channel, you can install up to 6, plus 6 DDR4 memory, the total memory capacity of single system can achieve an amazing 6TB. Second generations of proudly-lasting memory, morphology and DDR4 are consistent Intel is now announced that the third generation of "Crow Pass" is about to launch the third generation of proud memory, the world's first DDR bus, will be available in the future expandance of the "SAPPHIRE RAPIDS". Intel did not disclose the specific characteristics of the third generation of proudly, but before, the SAPPHIRE RAPIDS (fourth-generation scalable) platform will ship in the second half of 2021, based on the 10nm Superfin process, and introduce DDR5 memory. PCIe 5.0 bus, CXL 1.1 heterogeneous interconnection agreement, AMX advanced matrix expansion acceleration instruction set. In this way, the third generation of proud memory bars will be compatible with DDR5 DIMM forms and join hands. According to rumors, SAPPHIRE RAPIDS will have a new Golden Cove CPU architecture, up to 56 core 112 thread (not exclude 60 core 120 thread), MCM multi-chip package design, and integrate HBM2E high bandwidth memory, maximum capacity 64GB, maximum bandwidth 1TB / S, provide up to 80 PCIe 4.0, support eight channels DDR5-4800, the thermal design power consumption is up to 400W. Editor in charge: GT, read full text

     

     

     

     

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