Kui launches a new Verilog-A nonlinear device model suitable for GAN wireless RF devices

NASDAQ: CREE announces the introduction of a new Verilog-A nonlinear device model suitable for GaN radio frequency devices, which is developed for Agilent ADS and AWR's leading wireless RF design platforms such as MicroWAVE Office. The new device model can support more complex circuit simulation, including the latest broadband modulated envelope analysis and 4G cellular communication multi-mode radio frequency power amplifier. Jim Milligan, director of Ke Rui Radio Frequency (RF) and microwave department, said: "The new device model enables wireless RF design engineers to predict nonlinear performance by harmonic balance, perform transient analysis, and using any modulated signal in real environments The gateway simulation of the GaN Hemt device can help designers develop high efficiency circuits such as doherty amplifiers, thus improving adjacent channel power ratios, spectral regeneration, and error vector amplitude, and evaluating the performance of the amplifier Whether to meet the spectral needs of the LTE resource configuration. The new model also has the advantage of multi-core processors, so the simulation time can be greatly reduced. " Ray Pengelly, the Manager of the Sharid RF Business Development, said: "Transient analysis can deeply inspect the construction of the switch mode power amplifier, which can also be driven directly through the digital signal. And combined with the ChiReix inverted phase method, efficiency demonstrates more than 70 %. "

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