The world's largest radio frequency power transistor supplier Enchi Chip semiconductor (NXP Semiconductors N.v.) today announced the introduction of the highest power transistor for 915MHz applications. The MRF13750H transistor provides 750W continuous wave (CW), which is 50% higher than the current market. The MRF13750H transistor breaks through the 50V silicon technology LDMOS, breaks through the limit of the semiconductor RF power amplifier, making it a very attractive product of replacing the vacuum tube in the high-power industrial system.
The world's largest radio frequency power transistor supplier Enchi Chip semiconductor (NXP Semiconductors N.v.) today announced the introduction of the highest power transistor for 915MHz applications. The MRF13750H transistor provides 750W continuous wave (CW), which is 50% higher than the current market. The MRF13750H transistor breaks through the 50V silicon technology LDMOS, breaks through the limit of the semiconductor RF power amplifier, making it a very attractive product of replacing the vacuum tube in the high-power industrial system.
This transistor is simple and easy to use, which greatly facilitates microwave generator designers. The MRF13750H has excellent precision, control and reliability compared to the technique of the vacuum tube (such as magnetron). The MRF13750H supports accurate power control within a full-dynamic range of 0 to 750W, and frequency shifting can help accurately use radio frequency energy. Moreover, the performance of MRF13750H has fallen very small over time, and it can work for decades, which reduces the total cost of ownership. The MRF13750H operating voltage is 50V, safer than magnetrol control. In addition, the solid-state power amplifier is small, which helps to achieve design redundancy and flexibility.
Pierre Piel, senior director and general manager of NXP Market RF Power Industrial Technology: "For a long time, the reliability and excellent control characteristics of semiconductor devices have already been recognized, but industrial system designers are difficult to combine multiple transistors to match magpoically controlled pipes. Power level. Now uses the excellent performance of MRF13750H, industrial heating engineers can use this transistor in very high power systems. "
Klaus Werner, executive director of RF Energy Alliance, said: "In view of the high-efficiency radio frequency energy as a high-efficiency controllable heat source and power source, the RF Energy Alliance (RFEA) believes that the technology has an immeasurable market opportunity, not only improves existing radio frequency. Energy applications, and help to develop new energy applications. The powerful performance of the new product MRF13750h will undoubtedly accelerate the transformation of the industry to solid radio frequency technology. "
This new transistor is designed for industrial, scientific and medical (ISM) applications, range from 700MHz to 1300MHz, especially suitable for industrial heating / drying, solidification and material welding and particulate accelerator applications. MRF13750H can provide 750W CW at 915 MHz, 67%, packaged to 33.8 inches (7.69.7 cm) small package.
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