On June 29, Taichi Shares said will fund raise fundraising of 5002 million yuan, build new high-power semiconductor device upgrade projects; invest 6 billion yuan of freight semiconductor device project built in June, expected to vote for the year; Hua Micro Electronics 8-inch power semiconductor device wafer production line Project In the first phase of June 3 ... In the semiconductor field, the overall performance of power devices has always been stable, but the industrial heat in the near period period is rapidly improved, and the news of relevant investment expansion is constantly emerging. . This situation is undoubtedly related to the growth of market demand.
Under the encouragement of new infrastructure, the market demand for electric electronics is more intense. This adds a fire to the development of the power semiconductor device industry. In this case, what development trend will power semiconductor devices?
New infrastructure favorable power semiconductor device
The power semiconductor device is known as the "CPU" of power electronics. Essentially, it is the unidirectional conductivity of the semiconductor to achieve frequency conversion, variable phase, transformer, reverse, rectification, growth, switch and other electrical energy conversion in power electronics, and achieve transmission, processing, storage of electrical energy (power). And control.
With the increasing power of electricity, electricity, information, and digitization have more and more deeply influenced the development of society. In this context, the role of power semiconductor devices is increasing, especially since the beginning of this year, my country vigorously promotes new infrastructure, which adds a fire for the development of power semiconductor devices industry.
The new infrastructure is essentially information-digitized infrastructure construction, and these facilities are not applicable to electricity and electronic equipment. According to the Chinese Academy of Engineering, Ding Rongjun, the new infrastructure mainly includes information, integration, and innovative infrastructure construction. With 5G, Internet infrastructure represented by the Internet, the data infrastructure represented by cloud computing, block chain, and data center, these facilities are large, the demand and quality of electricity electricity (power supply) Stability, power amplification and energy utilization efficiency have higher requirements. This will inevitably rely on the power semiconductor device as the underlying technology. In the new infrastructure, the integration infrastructure covers intelligent transportation, intelligence energy, etc., such as high-speed trains, intercity trains and urban rail transit, etc., power semiconductor devices as key core components of electrical energy conversion, can greatly increase electrical energy conversion and transmission Process efficiency reduces energy consumption. In major science and technology infrastructure, science and education infrastructure, industrial technology innovation infrastructure, etc., and power semiconductor device technology supports the basis and common core technology of many industrial development. It can be said that the power semiconductor device is the underlying guarantee and basic support for the new infrastructure deployment and implementation.
Yang Qinyao, general manager of BYD Power Device, also pointed out that power semiconductor devices are widely used in all areas of new infrastructure, especially in special high pressure, new energy automotive charging piles, rail transit and industrial Internet, in terms of 5G infrastructure and big data The central construction of the power module is a very critical component.
It is precisely because power semiconductor devices play a key role in 5G infrastructure, special high pressure, new energy automobile charging piles, large data centers, etc., and power semiconductor devices have a wide range of applications in these areas. With the rapid implementation of new infrastructure, power semiconductor device manufacturers will usher in huge growth opportunities.
According to IHS data, my country's power semiconductor device market is $ 1.38 billion in China. In 2021, my country's power semiconductor device market is expected to reach 15.9 billion US dollars, an annual composite growth rate of 4.83%, exceeding the growth rate of global power semiconductor devices. The Sino-Golden Corporation Research Department believes that under the "new infrastructure" and import alternative promotion, it is expected that China's only communication base station power supply power semiconductor device market will reach 12.6 billion yuan in 2025.
Star product IGBT and MOSFET proportional to rapid increase
The power semiconductor device has been developed for more than 60 years, with a wide variety of products, mainly including power diodes, power triodes, thyristors, MOSFETs, IGBTs, etc. Among them, MOSFET and IGBT have grown rapidly in the market size of the market in recent years, accounting for continuous improvement. The IC Insights report pointed out that in various power semiconductor devices, the most optimistic product in the future is MOSFET and IGBT module.
Simply, MOSFET is a field effect transistor that can be widely used in simulation and digital circuitry. The MOSFET has the advantages of small on-resistance, low loss, simple driving circuit, and excellent thermal resistance characteristics. It is suitable for PC, mobile phone, mobile power supply, in-vehicle navigation, electric vehicle, UPS power supply and other power control areas. IHS estimates, 2022 Global MOSFET markets close to $ 7.5 billion.
IGBT is a composite power semiconductor device consisting of bipolar transistors (BJT) and MOSFETs, and has the advantage of high input impedance and BJT of MOSFET. The IGBT drive power is small, which is ideal for converting systems for DC voltage of 600V and above, such as new energy vehicles, inverters, switching power supplies, lighting circuits, AC motors, etc., estimated 2020 global IGBT market space reached 6 billion US dollars. Around.
The implementation of the new infrastructure will undoubtedly reinforce the market leading advantages of MOSFET and IGBT. Yang Qinyao pointed out that new energy vehicles, rail transit and other fields accelerated, will drive power semiconductor devices industry to usher in development opportunities. Taking the new energy vehicle as an example, the current range between the -100A to + 150A during operation, such a huge current needs to be accurately controlled by the electric control unit to achieve the braking of the car, and the core of the most core components is IGBT. There is a data show that the value of automotive power semiconductor devices in new energy is about 5 times more than 5 times, and IGBT accounts for approximately 37% of the cost of new energy automotive electric control system. The rapid growth in the future new energy vehicle market is expected to drive the significant increase in IGBT usage, which has strongly promoting the development of the IGBT market.
The communication industry is another major field of power semiconductor device applications. Li Hong, general manager of China Run Microelectronics Power Device, pointed out that 5G is the core of the new infrastructure, and AI will grow rapidly on the 5G basis. The two complements are the most potent growth field. The semiconductor industry, especially the power semiconductor device industry, is both a technology-driven industry, and an industry that applied demand. The base station equipment required for 5G construction has brought the rapid development of the Internet of Things and cloud computing, and the power semiconductor device will have a long-term demand for the power semiconductor device. Take 5G core technology Massivemimo as an example, its extensive deployment will greatly improve the demand for RF device composed of MOSFET.
Third generation semiconductor has development potential
From the perspective of technology development, with the approach cost of silicon-based devices, mainstream power semiconductor devices manufacturers have surrounded the third generation semiconductor materials such as silicon carbide (SiC) and gallium nitride (GaN) in recent years. The third generation of semiconductor materials have characteristics such as wide-band, low-power loss, and rapid development of new scenes such as high-voltage high frequencies, and become one of the important development trends in the field of power semiconductor devices.
However, the third-generation semiconductor also has problems with high manufacturing costs and long-term reliability, so there is also a more extensive promotion application to reduce costs and improve performance. The implementation of new infrastructure has undoubtedly a great help to the expandation of penetration in power devices in the third-generation semiconductor material. In this regard, President Mu Jiezhong, which is the regional marketing and application vice president of simulation product device partial power discrete and simulation product device partial marketing and application, indicating that new infrastructure is a huge opportunity for SiC and GaN devices. The advantage of SiC devices relative to Si devices is that energy loss can be reduced, and miniaturization and high temperature are easier. The SIC device is used in the field of DC charging piles and smart grids, industrial electricity, which can bring high efficiency, high power, high frequency advantages. GaN devices also have its market space. The advantage of Ga is that its switching frequency is very high. High switching frequencies mean that a dimensionally smaller passive component can be used. If you need to reduce the dimensions of the device, the GAN will play an important role.
Taking the new energy vehicle charging pile as an example, Mu Jicheng pointed out that the construction of charging piles has become a part of the new infrastructure, the effective distribution of the pile ratio and charging pile directly affects the use experience of new energy automobile consumers. With the improvement of new energy vehicles, consumers are more convenient, fast charging, therefore need to expand infrastructure construction, increase the number of charging stations and provide faster charging services. Advanced power technology and new materials such as SiC play an important role in new energy vehicles. Car charger and inverters are driving semiconductor companies to invest new wide-band semiconductor technology and new IGBT, and develop new power packages to maximize the advantages of this high-tech silicon technology. Data show that 2018-2025 SiC MOSFET is expected to maintain a average growth rate of 12% in industrial fields such as charging piles.
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