On March 10, 2016, Japan, Tokyo, Japan - The world's leading semiconductor solution Supplier Ruisa Electronics Co., Ltd. today announced the introduction of the eighth generation G8H series insulated gate bipolar transistor (IGBT) Six new products, which can minimize the conversion loss in the power regulator of the solar power system, and reduce the inverter applications in the uninterrupted power supply (UPS) system. The six new products launched are 650 V / 40 A, 50 A, 75 A, 1250 V / 25 A, 40 A and 75 A, respectively. Renesa also achieved the industry's first TO-247 PLUS package for 1,250 V IGBT with built-in diode, which provides system manufacturers with greater circuit configuration flexibility.
With low loss IGBT, Renesa optimizes the eighth generation IGBT with a unique trench gate configuration (Note 1) in the process structure in the process structure. Compared with the previous IGBT products, these devices have faster conversion performance, which is a basic feature of the IGBT performance index, and also reduces the conductive loss by lowering the saturation voltage (VCE (saturated), Note 2). In addition, the performance index (Note 3) of the eighth generation device has improved 30% compared to previous seventh generation IGBT, which helps to reduce power consumption and improve overall performance for the user system. These updates are essential for focusing on photovoltaic (PV) inverters, UPS, industrial motor drivers and power factor correction (PFC). These updates are essential.
In the solar power system, when the inverter (DC) generated by the solar panel is converted to an alternating current (AC) by the inverting circuit, it is inevitable to cause some power loss. Since most of this power loss occurs within the power devices used, therefore reduces the power generation performance of IGBT power loss to the power generation performance of the user system has a direct positive impact. Similarly, for the UPS system of the server room and data center, electricity must continue to flow through the power converter circuit to monitor whether the power is interrupted, which means that the system is running when the system is running. IGBT performance is a key factor in reducing this power consumption.
The main features of the new eight-generation IGBT include:
(1) Switch faster, with industry-leading ultra-low power characteristics, is ideal for inverting circuits
Renesa has developed a unique trench gate configuration with its long-term low loss IGBT design expertise. The new IGBT adopts the most advanced process technology, which enables fast switching performance and low saturation voltage (VCE (saturated)) characteristics, which determines the performance indicators of the IGBT device. Therefore, the performance index has improved by 30%. In addition, Rissa analyzes elements that reduce the power consumption of inverting circuits and designed new equipment to reduce conductors and switching losses. Therefore, it greatly reduces the power consumption of IGBT, which is more than half of the total power consumption of the power converter circuit.
(2) Thanks to the low switch noise, there is no need to install external gate resistance
In IGBT, we need to trade between noise characteristics and switching speeds. The eight-generation IGBT is greatly reduced during the switching period, so that the system manufacturer can be detachably reducing the gate resistance mounted to the noise, thereby reducing the number of components and enhancing the design compactness.
(3) The TO-247 package has excellent heat dissipation; ensuring operation at a high temperature at 175 ° C
The TO-247 package is made of metal, which can be directly delivered from the heat generated by the IGBT power to a package outer surface having excellent heat dissipation performance. The new device adapts to a high temperature of 175 ° C, which can be used to improve the performance and reliability of the user system due to high-power stage transmission and easy temperature.
(4) The first 1250 V IGBT with built-in diode in the TO-247Plus discrete package, can be used for 75A current loop with rated power 100C
In the previous generation of products, the 75A current rings of the rated power of 100c are generally incorporated into the large package. However, with the characteristics of low loss and chip size, Renesa implemented the first 1,250 V IGBT with a built-in diode in the industry. The system manufacturer implements the flexibility of only the reinforcing circuit configuration provided with only discrete devices in a 75A current strip of the rated power, and can easily improve the power capacity of the system.
Even in non-inverting circuit applications, new eight-generation G8H series devices can also show rapid switching performance, for example, the converter boost circuit can have excellent performance.
Pricing and availability
Samples of the eighth generation IGBT can now be provided. System manufacturers can choose the most matching of the inverting circuit type and product of the desired output capabilities. Each product version is different, for example, RBN50H65T1GPQ-A0 650 V / 50 A product sample pricing is $ 300 per piece. It is scheduled to start mass production in September 2016, which is expected to reach 600,000 months in March 2017 (pricing and delivery, if there is any change, no notice.)
For the main specifications of the new eight-generation IGBT, please refer to Specifications (PDF: 59 KB).
650V products
1250 V Product
(Note 1) The groove gate structure forms a deep and narrow groove (trench) on the surface of the chip, followed by forming a MOSFET gate on both sides of the groove. Thereby increasing unit density and helps reduce on-resistance.
(Note 2) Saturated Voltage (VCE (saturated)) is the most important indicator of IGBT performance. It represents the voltage between the set electrode and the emitter in the operating state. The lower the voltage value, the less conduction loss when the current flows through the element.
(Note 3) This performance indicator is equal to the switching loss VCE (saturated).
About Reisa Electronic Co., Ltd.
Renesa Electronic Co., Ltd. (TSE: 6723) is the preferred supplier of the world's premier microcontroller supplier and advanced semiconductor solution, including microcontrollers, SOC solutions, and various simulation and power devices. In April 2010, NEC Electronics (TSE: 6723) and Corporate Sapa Technology combined with Risa Electronics Co., Ltd., the company's business covers research, development, design and manufacturing facilities for various applications. Risa Electronics Co., Ltd. is headquartered in Japan, with branches in more than 20 countries around the world. Technology area
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