Serial MRAM MR25H256

MR25H256 is a serial MRAM with a chip selection (CS), serial input (Si), serial output (SO), and serial clock (SCK), serial input (SI), serial output (SO), and serial clock (SCK). 32kx8 memory array. SPI) Bus. Serial MRAM implements a universal command subset of today's SPI EEPROM and flash memory, allowing MRAM to replace these components in the same slot and interoperate on a shared SPI bus. Serial MRAM has excellent write speed, unlimited durability, low standby and running capability, and more reliable data reserves compared to available serial memory alternatives. For MRAM, the 256KB serial SPI MRAM MR25H256 based on Everspin Technologies is evaluated. Table 3 shows that when all energy of the decoupling capacitor, each data byte is the lowest. The size of the decoupling capacitor should be selected to match the amount of data that is usually acquired. -μF capacitor allows 50 bytes (46 data bytes) to be written on the SPI bus at 40 MHz, while the MRAM consumes 27 mA. This calculation is a source that compares 46 bytes. MCU and LDO consumption energy For MCU, it may take 100μs to wake up, perform measurements, and communicate the results to non-volatile memory and perform the necessary internal management. During this time, we assume that the active current consumes 500 μA (typical value of a small MCU running at about 5 MHz). Therefore, each data acquisition consumption is 3.3 V × 500μA × 100 μs = 0.165 μJ. In addition to the energy captured, we should consider maintaining the energy required to be in active state during non-volatile memory write. When the data is not acquired or stored, the MCU is in a sleep state and consumes 5μA current. It is assumed that the power supply is an LDO, which consumes 1μA current in all operational phases (activity and sleep). Read more

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