Serial MRAM memory MR25H256ACDF overview and characteristics

MRAM is a storage technology that uses electronic spin to store information. The MRAM has the potential to become a universal memory, which can combine the density of the storage memory to the speed of the SRAM while having non-volatile and energy saving. The MRAM can resist high radiation and can operate under extreme temperatures and can be tamperped. This makes MRAM suitable for automotive, industrial, military and space applications. Here is an Everspin non-volatile 256KB serial MRAM memory MR25H256ACDF. MR25H256ACDF is a serial port MRAM, a memory array logical organization 32kx8, a single selection (CS), serial input (SI), serial output (SO), and serial clock (SCK), serial output (SI), serial output (SO), and serial input (SI), serial output (SO) and serial clock (SCK) Pin interface bus. Serial MRAM implements a command subset of today's SpieEPROM and flash components that allow MRAM to replace these components in the same slot and interoperate on the shared SPI bus. Serial MRAM provides excellent write speed, unlimited durability, low standby power, and more reliable data reserves. MR25H256ACDF has been published, recommended for all new design. About more product information can consult the Everspin agent while providing customers with product related technical support. MR25H256ACDF characteristics • No write delay • Unlimited write durability • Data retains more than 20 years • Automatic data protection at power failure • Block write protection • Fast, simple SPI interface, clock rate up to 40MHz • 2.7 to 3.6 volts supply range • Low Current Sleep Mode • Industrial and automobile 1 and level 3 temperature • Provide 8-DFN or 8-DFNSMALLFLAGROHS compatible packages. • Direct replacement serial EEPROM, flash memory, ferge • Industrial grade and AEC-Q1001 and level 3 options • Humidity sensitive MSL-3 Electrical Specifications The device includes circuitry that protects input from high static voltages or electric fields; however, normal precautions are recommended to avoid applying any voltage above the maximum rated voltage to these high impedance (HI-Z) circuits. The device also includes protection of external magnetic fields. Preventive measures should be taken to avoid any magnetic fields that are more strong than the magnetic field intensity specified in the maximum rated value. Editor in charge: Tzh, Read more

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