Spectral Semiconductor launches 600W BLF0910H9LS600 LDMOS power amplifier transistor

Tonglong Semiconductor (AMPLEON) announced that 600W BLF0910H9LS600 LDMOS power amplifier transistors. This is the first RF energy transistor using the latest Gen9HV 50V LDMOS process using Sectumonal. - The node has been optimized for greatly increasing efficiency, power and gain. It is designed for industrial heating continuous waves (CW) RF energy applications in the 900 to 930 MHz ISM band. The transistor is encapsulated by small ceramic SOT502, combined with large output power and provides the best work efficiency in small size. This reduces the space required to reduce the cost of the amplifier design. Due to its high working efficiency - is usually higher than 68%, its cooling demand remains at a minimum, which helps further reduce the space required. BLF0910H9LS600 has high gain advantages - its 19.8 dB typical gain is measured at 50V VDS in 915MHz CW AB applications - this helps to increase the overall efficiency of the amplifier. The designer can build a 1.2 kW radio frequency power amplifier in the same space as a single SOT539 package using two such small SOT502 packaged 600 W transistors. This architecture also helps reduce transistor temperature and effectively achieve higher efficiency than individual SOT539 solutions. The BLF0910H9LS600 integrates ESD protection and internal input matching. This match increases the input impedance of the transistor, simplifies the design of the PCB matching structure to achieve a compact amplifier design. , Reading the full text, the technology area Vishay announces the introduction of new series of ultra-thin, large current IHLP® inductors --- SGIHLP series Renesa Electronics announced three programmable power management ICs Panasonic may produce batteries used in China Is the lithium titanate material really becomes a key to the current new energy vehicle development barrier? Constant voltage (CV) pulse charging is the most cost effective solution

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