Triquint launches new high-performance GAAS RF drive amplifier

News main points: adopt new packages, advanced features and support 50-1500 MHz bandwidth Triquint Semiconductor (NASDAQ code: tqnt), launched two 1W and 2W arsenide (GaaS) RF drive amplifiers with new package, TQP7M9105, TQP7M9106, which are in CDMA, WCDMA, and LTE base stations or similar applications It is possible to provide first-class linearity, low power and advanced protection. These high-performance amplifiers have extremely wide working bandwidth and provide high performance between operating ranges 50 to 1500 MHz. TQP7M9105 and TQP7M9106 are the latest members of the growing TRIQUINT third-generation 5V linear drive amplifier product line. In addition to the exceptional performance in the cellular receiving base station (BTS) application, they are equally applicable to radio frequency design of remote radio head end (RRH) and small honeycomb base stations. The TQP7M9105 provides 1W (+30 dBm) P1DB RF output power, the gain is 19.4 dB, the output three-order intercept point (OIP3) is 49 dBm of the highest linearity of the same type, only the +5 V voltage is only 220 mA. TQP7M9106 provides 2W (+33 dBm) P1DB RF output power, the gain is 20.8 dB, the output three-order interception interception point is 50 dBm greater than the competition device, only 455 mA at the +5 V voltage. Both devices are integrated on-chip circuitry, which enables them to achieve typical linearity of amplifiers that work mode A-class but efficiency is the AB class. In addition, these two products also have excellent power resistance, which can handle their "exceeding specifications" working conditions. For example, they provide radio frequency input overload protection and DC overvoltage protection. In addition, their on-chip electrostatic discharge (ESD) protects them to meet stringent 1c HBM specifications, which allows them to withstand most of the stray voltages that are usually encountered in the normal manufacturing environment. These two products use a RoHS standard lead-free SOT-89 (TQP7M9105) package and 4X4MM QFN (TQP7M9106) surface mount package. Technical details: TQP7M9105 50-1500 MHz RF drive amplifier, 1W (+30 dBm) P1DB RF output power, +49 DBM OIP3, 19DB gain, on-chip radio frequency input overload, DC overvoltage and electrostatic discharge protection; + 5V power supply, 220mA current consumption; 3 Pin SOT-89 package. TQP7M9106 50-1500 MHz RF drive amplifier, 2W (+ 33DBM) P1DB RF output power, +50 DBM OIP3, 20DB gain, on-chip radio frequency input overload, DC overvoltage and electrostatic discharge protection; + 5V power supply, 455mA current consumption; Foot 4x4mm QFN package. The new TQP7M9105 and TQP7M9106 drive the amplifier now produced and supplies complete assembly assessment clamps. For details, please contact TriQuint, please contact your sales representative or distributor, please visit http://cn.triquint.com/sales.