Two-dimensional non-volatile memory chip: 156 times the performance is 156 times

Compared with Samsung, Toshiba, Magoguang and other companies, China is now in DRAM memory, NAND flash memory has been backward for many years, but China's researchers have been chasing the latest generation technology. Not long ago, there is reported that China's investment of 13 billion yuan to open a PCM phase Change memory, performance is 1000 times the ordinary memory chip, now more powerful - Fudan University Microelectronics College Professor Zhang Wei, Zhou Peng led the team developed a new two-dimensional non-volatile memory chip, they The semiconductor structure is used. It is excellent in performance of the stored chip. It is 1 million times the traditional two-dimensional memory chip, and the performance is longer, and the refresh time is 156 times the memory. That is to say, more durability. DIY players should know that the memory, the advantages and disadvantages of flash memory - the memory speed is extremely fast, but the power failure will lose data, and the cost is expensive, the delay of the flash is a magnitude higher than the memory, but the advantage is to save the data, while cost Low, so the industry has been looking for a memory chip that can have a memory, flash memory, which is to save the data. The 3D XPoint flash memory of Intel has similar characteristics, and the alleged performance is 1000 times. The durability is 1000 times the flash memory. The PCM phase change storage mentioned in front of the news is also similar technique. It can save data at the same time when power is turned off, but these new memory chips have not reached memory, and flash is mature. Point. The memory chip developed by Chinese scholars is also this direction. According to their paper in "Natural · Nanotechnology" magazine, the memory chip they develop is not the traditional chip's field effect, because the latter is physical size. In the case of gradually shrinking, the quantum effect is encountered, so Zhang Wei, Zhou Peng team uses a semi-floating gate transistor technology, which shows a Van de-Wals heterogeneous structure. Nearly non-volatile semi-floating gate structure, this new type of memory chip has excellent performance and durability. Specifically, compared with the DRAM memory, its data refresh time is 156 times the former, which is to save longer data, and have a necity-level write speed (NAND flash memory is generally For milliseconds), it is 100,000 times faster than traditional two-dimensional materials. Therefore, this new memory is expected to narrow the gap between traditional memory and flash memory. Of course, this technology is still very nice, but don't expect the technology very fast, it is more impossible to enter the market in the next two or three years, but there is also a new memory chip with DRAM and NAND, is not mature Slimation, traditional memory, flash memory has a long life. Original address: https://www.eeboard.com/news/cunchuxinpian-2/2/ Search for the panel network, pay attention, daily update development board, intelligent hardware, open source hardware, activity and other information can make you master. Recommended attention!