Silicon carbide (SiC), which can be used to create a better transistor, replacing today's silicon power transistors, together with the diode, provide a minimum temperature, and the highest frequency power component. The heat generated by the SiC transistor is 30% lower than the silicon power transistor, however, its cost is still more than 5 times more than silicon.
Jay Baliga, Professor, North Carolina State University (NCSU), believes that this is because SIC needs dedicated process technology, which makes it high, and built high into the door. In order to find a low-cost authorization process to reduce these obstacles, Baliga and its research teams have designed a "Process Engineered for Manufacturing SiC Electronic-Devices; Presice), and Texas Instruments (Texas Instruments) The X-FAB of Ti) is implemented.
The researchers will publish technical details in the 2017 Silicon Carbide and Related Materials International Conference (ICSCRM 2017), held in the 2017 Silicon Carbide; ICSCRM 2017.
According to Baliga, PRESTICE is not just a low cost alternative method of developing SIC processes, which is more efficient than traditional proprietary processes. Reducing the cost of authorization will help to get more people to join the market competition, thereby increasing the production of SiC. Conversely, this inevitably reduces the price of SiC, perhaps reducing only 50% more than silicon.
In addition to the lower temperature, the SIC power component can also switch to a higher frequency, so that the power electronics can be used to use smaller capacitors, inductors, and other passive components, which ultimately makes designers can be smaller. More components are packaged in space, but still keep it lightweight. Baliga said that the Presice process enables higher yield and strictly control the characteristics of the SiC component.
To prove this concept, the researchers use Presice in Ti X-Fab, manufacturing SiC power MOSFET, AccuFET and tidal barrier-based (JBS) rectifier to create a 1.2kV power supply. The JBS backfall rectifier of the power MOSFET structure can create a power JBSFET that makes it more than 40% of the chip area of the silicon-based design, and the number of packages is also halved.
The US Department of Energy (DOE) provides funding for this study. In addition to Jay Baliga, he also included K. Han, J. Harmon, a. Tucker and S. Syed, North Carolina State University, and W. Sung of New York State University of Technology (Suny).
Original link: https://www.eeboard.com/news/sic/
Search for the panel network, pay attention, daily update development board, intelligent hardware, open source hardware, activity and other information can make you master. Recommended attention!
[WeChat scanning picture can be directly paid]
Technology early know:
The new mobile phone screen will be detonated: Jingdong's sixth generation flexible OLED panel will be mass production, surpass the international panel big factories can be stayed!
Loss and design of electric trucks
Worship! God-level DIY: large-scale unattended cars that can be loaded with weapons systems
The 5 engineers complained in the Taiguang enterprises in Taikuoguang companies for commercial spies!
MobiveIL combined with Crossbar launches RERAM technology-based SSD, ultra-fast read and write speed, ultra-high density rolling existing SSD
Our other product:
