TEM
Cell is used for EMC consistency prediction --- radiation immunity
The immunity test is connected by the radio frequency signal generator and connected to the TEM unit. The partition radiates the RF signal into the DUT, and the radio frequency signal is usually a modulation (AM) or pulse modulation.
Factory complete solution
Spectrum Analyzer: You can use Push-Source DSA815, Dingyang SSA3021X, VSA6G2A or other brands, or use used spectrum instrument (such as N9020A)
RF power amplifier: Our Tekbox provides a series of modulated power amplifiers that are ideal for low-cost immunity testing. Such as: TBMDA1 (40M-3G), TBHDR1 (30K-1.5G), etc. These amplifiers built into the modulator to generate the desired modulation format, which is driven by the tracking source of the spectrum analyzer, so the RF signal generator may not be investd.
According to the selected modulated signal amplifier and the TEM unit, the field strength of up to several hundred volts can be generated by this setting. For more information, please refer to
Test the data sheet of the amplifier.
Considering that the electric field and the separator are orthogonal, consider the worst case of DUT testing, place it within the TEM unit, make the PCB trace vertical and separated
The direction of the board is exposed to the biggest field.
TEM field strength
The electric field (V / M) between the partition and the TEM unit (upper) wall is
E = V / D, where V is the RMS voltage of the applied signal, D is the distance between the partition and the upper (upper) wall, which is based on a simplified assumption, that is, the E field is completely uniform / uniform distribution.
A more practical formula is E = V * COR / D, where COR is a calibration factor on the average field strength on the DUT volume, which is obtained by analyzing the field distribution of the unit cross section.
Suppose the DUT is placed in the middle of the bottom wall and the separator, then we can use a simplified formula with sufficient accuracy.
D = 2.8cm e = (√ (p * 50Ω)) * 35.7
D = 5 cm e = (√ (p * 50Ω)) * 20
D = 10 cm e = (√ (p * 50Ω)) * 10
D = 15 cm e = (√ (p * 50Ω)) * 6.66
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TBTC0, application RF power
The biggest field between the partition and the wall
10W (40DBM)
799 v / m
1W (30dBm)
253 v / m
0.1W (20dBm)
82 V / M
0.01W (10dBM)
25 v / m
TBTC0, field strength and radio frequency power
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TBTC1, RF power
The biggest field between the partition and the wall
10W (40DBM)
447 V / M
1W (30dBm)
141 V / m
0.1W (20dBm)
44 V / m
0.01W (10dBM)
14 v / m
TBTC1, field strength and radio frequency power
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TBTC2, application RF power
The biggest field between the partition and the wall
10W (40DBM)
224 V / m
1W (30dBm)
71 V / m
0.1W (20dBm)
22 v / m
0.01W (10dBM)
7 v / m
TBTC2, field strength and radio frequency power
TBTC3, application RF power
The biggest field between the partition and the wall
10W (40DBM)
148 v / m
1W (30dBM)
47 V / m
0.1W (20dBM)
14 v / m
0.01W (10dBM)
5 v / m
TBTC3, field strength and radio frequency power
50 Euro / EUR loads any one of the two ports of the TEM and connects another port to the signal generator / RF power generator. Place the DUT under the partition, then turn on the power, scan and observe the DUT. In addition to TEM, the electric field decreases at a speed of approximately 30 dB / m, so it has no effect in the normal environment.
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The directional coupler will be inserted between the power amplifier and the TEM chamber, and the forward and transmit power, the electromagnetic compatibility criteria are greatly different in application. EN6100-6-4 Industrial electronic standards specify 10V / m (before application modulation), and individual standards for automobile manufacturing may specify high-performance up to 400V / m, so the field strength determines the requirements of the RF power amplifier in the above list. Some criteria specify the modulated RF signal, and other standards specify pulse modulation.
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