Before introducing the process, let's talk about the Japanese daily new ion implantation equipment mentioned yesterday. Japan's new is one of the 3 large ion implantation equipment in the world.
In 1973, the company began to do ion implantation process equipment.
The current main business device is as follows. Details can go to its home page to understand.
Focus on the introduction of a device for use in the laser field:
Mainly injecting H ion, can reach H + ion implantation of 400KEV.
Home: http://www.nissin-ion.co.jp/en/sitemap.html
In 2016, Japan's Niko Ion Corporation signed a cooperation agreement with Yangzhou Economic and Technological Development Zone. Yixin Co., Ltd. will invest in the Yangzhou Economic and Technological Development Zone to build an ion injection machine equipment production plant.
Ion injection process parameters
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The ion implantation is like the above figure, and the ion is smashed into the wafer. The depth of the use of the intensity, quantity, angle, and smashed it.
Perhaps everyone will notice that when discussing the energy range, the KEV indicates that it is a single charge.
We know that the diffusion source is entered into the plasma chamber in the form of atoms, and its nuclear electron is ionized away, and some atoms are ionizing an electron, some, even 3, the more I ionizes, the more resistors. The greater the ability to need. Therefore, in a pot of Plasma, the monovalent ions are most.
The general ion-injection machine has the ability to charge, the principles can imagine what Coulomb's role in high school, different charges, and the momentum of the electromagnetic field is different. The device can select the valence ion to inject the process.
If the single charge can do 400KEV energy, the corresponding 3+ ions can do 1200KEV and can directly double the relationship.
The key process of ion implantation is how to control the doped dose, inject the depth, and the like.
For example, the AS is injected into the Si lattice. After the AS ion enters silicon, it continuously collides with the silicon atom, gradually damaging energy, and finally stopped, the position where the stop is random, there is no in the lattice. Electrical activity.
In 1963, Lindhard, Scharff and Schiott first established the distribution theory of injection ions in the target. Abbreviation LSS theory.
The LSS theory is that the discussion of ion is how the target is stopped, and the target of the target is atomic or agreed. Give them two names to prevent the skills.
Https://wenku.baidu.com/view/5935cde8970590c69ec3d5bbfd0a79563c1ed43c.html More detailed knowledge can read library files.
If we only know the doping dose, and ion energy, how to calculate the concentration and depth of injection ions in the target
For example, a 140KEV B + ion is injected on a 6-inch silicon film injecting 150 mm, and the injection dose q = 5 * 1014 / cm2, the substrate concentration 2 * 1016 / cm3.
Estimated the projected range of the injected ion, the standard deviation, the peak concentration, and the deep depth.
If the injection time is 1 minute, the desired beam is estimated.
In addition, when the other substrate materials are injected, the same ions, and silicon single crystals, the lattice constants, the more easily injecting, the smaller the lattice constant, and the more difficult injection. Just like the truth like the sand in the basket, the more the gap is, the more easily plug it.
However, the ion-injected equipment of different injection capacity, the price is much different, such as the third generation of semiconductor, it is necessary to have thousands W, one equipment must also cover the large number of houses, really burning the old hen Just, I don't know if I can get a golden egg.
Editor in charge: xj
Original title: Design and calculation of ion implantation process
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