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    Freescale launches RF power devices and reference settings for TD-SCDMA Wireless Networks

     

    Freescale launches RF power devices and reference designs for TD-SCDMA Wireless Networks: MRF7P20040H LDMOS FET and MD7IC2050N Freescale Semiconductor introduced two final LDMOS RF power transistors, offers a choice between the discrete and integrated circuit designers interposed solutions. This selection provides two accompanying reference designs, bring more flexibility to designers and helps to reduce time to market. The new transistor is optimized for the power amplifier based on time division synchronous code division multiple access technology (TD-SCDMA) a. The TD-SCDMA is a third-party wireless standards currently widely deployed in China, while other markets are also considering the use of the technology. Freescale new efficient device and MD7IC2050N MRF7P20040H LDMOS FET comprises a multi-stage integrated power amplifier IC. It also introduced two reference designs based on Doherty architecture, thus improving the manufacturers to create a compact, cost-effective for the TD-SCDMA network, the ability of high-performance base station transceiver products. Vice president and general manager of Freescale's RF Division Gavin Woods said, "Freescale provides high-performance solutions for customers using Chinese technology TD-SCDMA wireless network, and continue to maintain its leading position in LDMOS RF technology. PhaseOne Carl using its knowledge and leadership in RF power technology to support the specific requirements of TD-SCDMA. currently the Chinese are rapidly deploy TD-SCDMA technology. " Overall design flexibility Freescale's latest RF LDMOS devices make it possible to build RF power amplifiers, these amplifiers are optimized to fit the selected design. Designers can select three separate configuration MRF7P20040H PA as the final amplifier, or select MD7IC2050N IC (including a drive and a final amplifier) ​​PA in the two configurations. Both devices can well meet the needs of the Doherty amplifier, and generally deployed in a conventional base transceiver station. Doherty amplifier includes two amplifiers operating at different transmit signal conditions, and it usually requires a separate amplifier for each transistor, respectively. However, Freescale MRF7P20040H MD7IC2050N dual path and arranged so that in the final amplifier by a single device (instead of two) can be installed Doherty amplifier. Further, since the two are broadband devices, as they may be in TD-SCDMA - running two bands (1880 -1920 MHz, 2010 2025 MHz) are allocated, thus using the same device may be implemented in the two frequency bands in the RF power . These advantages can greatly reduce the complexity of the size of TD-SCDMA amplifier circuit and single billing, while also simplifying inventory management. Doherty amplifier reference design Freescale's introduction of two Doherty amplifier reference designs can significantly shorten the design cycle amplifier. The first general design Freescale MMG3014N the MD7IC2050N amplifier driver, based on the array to generate the two IC, the delivery efficiency of 35% and a total gain of 45dB when the average output power of 10W RF. Freescale paragraph designed as a pre-driver MMG3014N, MW6S004N LDMOS FET as a drive, MRF7P20040H as a final amplifier. Thereby generating three separate arrays, the delivery efficiency of 38% and a total gain of 50dB when the average output power of 10W RF. Both devices 6 comprises a common carrier frequency 2025 MHz Doherty performance measured TD-SCDMA, the other important characteristics comprising: · MRF7P20040HS: RF peak output power 50W; 10W average output power drain efficiency is 43%, the gain is 18dB. Pores of the ceramic package with the internal matching member, to facilitate ease of use. · MD7IC2050N: RF peak output power 70W; 10W average output power drain efficiency is 35%, the gain is 29 dB. 50 Ohm input quiescent current temperature compensation chip, providing 225 ° C over-molded plastic package matching sheet. Both RoHS-compliant devices are produced in the test after symmetrical Doherty amplifier configuration in order to provide an RF power output with guaranteed. At the same time they are combined electrostatic discharge (ESD) protection, because the assembly line to prevent damage due to stray energy. Pricing and Availability For sampling and pricing information, contact your local sales office or an authorized dealer Freescale Semiconductor. Technology area Heilind won the title of "2017 Huaqiang Electronic Network Quality Supplier" Tas5634300W stereo PurePath (TM) HD digital input efficient power level TAS2557 5.7W D-class audio amplifier with H-class boost and speaker detection function Ruckus NetWorks appointed Deng Weidong for the general manager of China China Site Electronic Technology Forum - Power Technology Practice Seminar held in Wuhan

     

     

     

     

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