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    Freescale launches two-level LNA, supports multiple wireless vaccines in a wireless base station in a single system

     

    Freescale Semiconductor (NYSE: FSL) recently announced a new two-level low noise amplifier (LNA) that satisfy the two gain-required requirements in one device, providing coverage across multiple frequency bands to simplify the design of the wireless base station. As the number of devices that support LTE is increasing, and the refinement of the recent network band configuration is required to support the demand for consumer networking requirements by supporting solutions that support multiple brands and protocols. Freescale meets these needs through its new two-level LNA, while eliminating the best combination of low noise and high gain while eliminating additional gain level needs. Freescale's MML09212H and MML20242H 2 LNA provides 0.52 and 0.57 dB noise coefficients, respectively, showing 37.5 dB gain, respectively, and shows 34 dB gains for high frequency band frequency. LNA provides coverage (including LTE and WCDMA) between multiple bands and protocols, enabling wireless base station OEM to implement gain functions that are usually implemented by two different devices, and configured across wireless network spectrums and bands. Ritu Favre, Vice President of Freescale, said: "For wireless base station providers, integration can be a challenging process for multiple solutions that can be used in multiple interfaces. Our new LNA provides a single The compact solution avoids the needs of the supplemental amplifier, supports common interfaces such as LTE and WCDMA, and helps designers shorten the development time and prepare the next generation network more efficiently to support a lot of influx LTE users. " This new two-stage LNA provides a high-integral three-order output interception point (OIP3), which can achieve low distortion and improve stability when temperature changes. This compact solution uses a small 3 mm package to help designers reduce the number of overall chips and save board space. The design of these devices is intended to support the receiver requirements of the radio base station, including processing power from the Femto to the Macro base station, and supports a wide range of wireless interfaces, including LTE and WCDMA / CDMA. Pricing and supply Two devices are currently available. Evaluation kits and other support tools have also been listed. For information on samples and pricing, please contact your local Freescale sales office or Freescale authorized dealer. Freescale Semiconductor: Leader of Base Station Application Freescale provides end-to-end chip solutions, applicable ranges from Femtocell to Macrocell (macro) base station applications, including AIRFAST RF power solutions, Qoriq Qonverge SoC, and RF GAA MMIC. Freescale is the world-leading provider of Silicon RF LDMOS power transistors used in the wireless base station and has recently announced the launch of the AIRFAST 28 V AFT26HW050GS LDMOS transistor, specially designed for wide instantaneous bandwidth Microcell / Metrocell LTE applications. Freescale has a number of patents related to GaaS, is the first company based on GaaS technology development devices. About Freescale Semiconductor Freescale Semiconductor (NYSE: FSL) is a global leader in embedded treatment solutions, providing industry-leading products, continuously enhances automotive, consumer electronics, industry and network markets. Our technology from microprocessors and microcontrollers to sensors, simulate integrated circuits and connections, which are our constant innovation, which also makes our world more environmentally friendly, safer, healthier, and more closely. Some of our main applications and end markets include car safety, hybrid and all-electric vehicles, next-generation wireless infrastructure, intelligent energy management, portable medical devices, consumer electrical appliances, and smart mobile devices. The company is headquartered in Austin, Texas, has a number of design, R & D, manufacturing and sales agencies in the world.

     

     

     

     

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