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    Large-scale MIMO antenna circuit design based on ADRV9008 / ADRV9009 Silicon Switch

     

    ADI RADIOVERSE ADRV9008 / ADRV9009 This new high-power silicon switch is very suitable for large-scale MIMO design. They rely on single 5V power supply operation, and the bias current is less than 1 mA, and an external component or interface circuit is not required. FET-based circuitry can be used to use low-bias current and low power supply voltage, thus low power consumption to negligible levels and can help thermal management in system levels. In addition to ease of use, the device architecture can also provide better isolation performance because more in parallel branches are included on the RF signal path. ADI Company ADRV9008 / ADRV9009 Silicon Switchacha The original view of the printed circuit board (PCB) of the switch and the new silicon switch based on the single-layer PCB is compared to the single-layer PCB. The PCB area occupied by the silicon switch is less than 1/10 compared to the switch based on the PIN diode. The ADI expert tells the author, which greatly simplifies the power requirements and does not require a high power resistor, which is also one of the benefits brought by the ADI silicon switch. PIN Diode Switch Design and Partial Comparison of Silicon Switches In fact, the high-power silicon switch for Adi can process up to 80W RF peak power, which is sufficient to meet the peak average power ratio requirements of the large-scale MIMO system and have margin. The lower Tura Listed the high-power silicon switching of ADI for different power levels and various package types. These devices inherit the inherent advantages of silicon technology, and better ESD robustness and reduce differences between components and components than alternatives. ADI has introduced high-power silicon switching series products, easy to deal with 5G challenge The large-scale MIMO system will continue to develop and will need to further improve integration. Adi's new high-power silicon switching technology is well suited for multi-chip module (MCM) design, integrating LNA to provide a complete, single-chip solution for the front end of the TDD receiver. In addition, ADI will also increase the frequency of new design and will lead similar solutions for millimeter wave 5G systems. As ADI expands its high-power silicon switching product line to X band frequency and higher frequencies, circuit designers and system architects will also benefit from ADI new silicon switches in other applications, such as phased array systems. Be Article source network

     

     

     

     

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