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    Marginal market prospect analysis

     

    According to Mams Consultation, in recent years, Ga has been applied to a large number of radio industries with higher power output and smaller footprints. Under the promotion of telecom infrastructure and national defense, it is expected that the overall market size of RF GaN will grow to $ 2 billion by 2024. Over the past decade, the global investment in telecom infrastructure has been very stable, and the Chinese government has continued to grow in recent years. In this stable market, a higher frequency trend, the RF Ga has found the land of the power amplifier (PA) with a 5G network frequency below 6GHz (SUB-6GHz). The application is expected to promote the growth of the GaN market in the next five years. Although the next generation of active antenna technology can provide advantages for silicon transversely diffusing metal oxide semiconductor (LDMOS) technology, but due to technical restrictions such as thermal management, radiofrequency pull far Head (RRH) will not be replaced and will use GaN PA for a long time. From 2021, the large-scale application of small honeycombs and backhaul connections will also bring significant opportunities for RF GaN. National security has always been a big event in the world. National defense applications always give priority to high-end and efficient systems. The mainstream technology trend in this context is that the United States, China, the EU and Japan have used smaller solid-state systems to provide higher performance and scalability. With the application of the new GAN-based active electronic scanning array (AESA) radar system, GAN-based military radar is expected to dominate the GaN military market, and it is expected that the compound annual growth rate (CAGR) of this segment in 2018-24 will exceed 21 %. For satellite communication applications that require high frequency high output, GaN is expected to gradually replace a gallium arsenide solution. For cable TV (CATV) and civil radar markets, GaN is still facing high cost stress compared to LDMOS or GaAs, but its added value is obvious. Gan-ON-Si provides a more cost-effective solution for the RF energy transfer market that represents GaN important consumption market. Finally, but not least, STMicroelectronics just officially announced they are targeting mobile phone PAs using GaN-ON-Si technology. Can Gan PA enters mobile phones? What are the advantages and bottlenecks? Future Development of Gan-On-SiC, Gan-On-Si, Gan-on-Diamond Be How does Gan win competition? Which technology will win? Since the first batch of commercial products 20 years ago, GaN has become an important competitor of LDMOS and Gaas in the field of RF power applications, and is continuously improved performance and reliability at lower cost. The first batch of GAN-ON-SiC and Gan-On-Si devices have almost simultaneously, but Gan-On-SiC has become more mature technology. GAN-ON-SIC is currently dominate the RF GaN market, which has penetrated into 4G LTE wireless infrastructure market, which is expected to be deployed in the 5G SUB-6GHz RRH architecture. However, at the same time, economic efficient LDMOS technology has also made a significant improvement in 5G Sub-6GHz active antennas and large-scale multi-input Multi-Output (MIMO) applications. In this context, Gan-ON-Si may extend to 8-inch wafer as a potential challenge, providing cost-effective solutions for commercial markets. Although the first quarter of 2019, Gan-On-Si is still in a small batch production phase, but it is expected to challenge the base station (BTS) and an existing LDMOS solution in the RF energy market. Another target market for Gan-On-Si manufacturers is a large-scale consumer 5G mobile phone PA market. If success, new market opportunities will be opened in the next few years. With the final amount of Gan-ON-Si products, Gan-On-SiC and Gan-ON-Si may coexist in the market for a while. Finally, but not least, innovative Gan-ON-Diamond technology is participating in competition, and Gan-On-Diamond technology is expected to provide higher power output density and smaller placeholdess area compared to other competitive technology. This technology is mainly for performance drive type applications, such as high-power base stations, military and satellite communications, etc. This report explores the RF GaN device technology on SiC, Si, Diamond and body GaN different substrate platforms. This report expects market pattern and cost trends in the coming years, an overview of GaN discrete transistors, single-chip microwave integrated circuit (MMIC) and front-end module (FEM) techniques, and pay special attention to emerging package technology. 2018 ~ 2024 Gan RF device market scale forecast RF GaN supply chain status RF GaN commercial products or samples currently have three different substrate platforms: SiC, Si and Diamond. The maturity of each technique has a great impact on the maturity of each supply chain. Gan-On-SiC is a mature technology, and the supply chain is mature, with many manufacturers and different integration levels. At the RF component level, top suppliers include Sumitomo Electric (SEDI), Cree / WolfSpeed ​​and qorvo. South Korea Elfort (RFHIC) has been greatly increased after listed in 2017. The leading compound semiconductor foundry Factory stable semiconductor (WIN SMICONDUCTORS is currently actively supplying RF GaN products. The Macom-ST Alliance leads Gan-On-Si competition, while RFHIC and AKASH SYSTEMS are two major suppliers of Gan-on-Diamond technology. For military markets, all countries and regions are strengthening their own GaN RF ecosystems. GaN applications are driven by many strong manufacturers, such as Raytheon, Northrop Grumman, Lockheed Martin, etc., UMS from Europe, Airbus ( Airbus, Saab, etc., and China's leading vertical integration vendors China Electronic Technology Corporation (CETC). However, in the telecommunications market, the situation is different. Many strategic cooperation and mergers have occurred in 2018. ■ Market leaders SEDI and Y-VI (II-VI) have established a vertical integrated 6-inch Gan-ON-SiC wafer platform to meet the growing market demand in 5G. ■ Color Rui acquires Infineon RF business, including LDMOS and GAN-ON-SiC technology packages and tests. GaN RF Manufacturers Map Be New product: This thing is easy! No hardware driver or embedded development, suitable for Win10 IoT Core and Azure platforms Small packaging, low power consumption, integrated model processing IC and 12 ADC, feel very powerful Yadenno's evaluation board is compatible with Arduino interface, and also with an LCD screen. It is more choices for developing designers. Powerful, 600V power device quality factor, set new power conversion benchmark Be Recommended activities: Participation Award | MPS Power Symposium Hangzhou Station, at least 100 yuan reward Registered Award | Summit you invite you to register your account, experience diversified devices to buy Mouser helps graduation season, subscribed for 1,75 yuan can apply for 100 yuan subsidy Cash back, a variety of history lowest price development boards, there is always a need! Be Invite you to join the panel engineer group (group number 135513647) More activities, consultation, technical exchange

     

     

     

     

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