The 1TB V-NAND chip capacity is twice the current maximum memory 512GB (Gigabit), and the new SSD (SSD) standard NGSFF (Next Generation Small Form Factor SSD) will replace the current M.2 2242 (NGFF) SSD Specification.
Han Dian Site, June 9, Samsung Electronic local time participated in the "2017 Flash Summit (FMS, Flash Memory Summit 2017", held in Santa Clara, California, and the first public capacity of up to 1TB in the exhibition. 3D NAND, is expected to be listed next year.
Pulse, ZDNET, HAN DOP, Samsung develops 1TB V-NAND chip (ie, vertical stack 3D NAND), the capacity is twice the current maximum memory 512GB (gigaBit). Samsung will combine 16 1TB DIE to form a group of V-NAND groups, each set of memory capacity up to 2TB (Terabyte) and continues to decrease.
Samsung claims that this technology is one of the largest progress of memory in the past 10 years.
Samsung Electronics 1TB 3D-NAND
1TB is equivalent to 126GB, can store 60 high-altitude of highly painted movies in two hours. Samsung said that many industrial development artificial intelligence and Internet of Things, data-intensive applications have increased, and Flash memory plays a key role to speed up data extraction speed for instant analysis.
Not only that, Samsung also show new SSD (SSD) standard NGSFF (Next Generation SMALL FORM FORM SSD), replacing the current M.2 2242 (NGFF) SSD specification. Samsung indicates that the NGSFF capacity is 4 times that of the previous generation. Combining the latest V-NAN can reduce the volume volume, which will maximize server storage data capacity, will be mass production in the fourth quarter of this year.
Among them, single-sided 16TB sample three is 30.5mm x 110mm x 4.38mm, of course, this is a very large value. (Source: PCPER) According to Samsung's demo, the typical server can plug 36 single 16TB NGSFF SSD, with a total storage capacity to 576TB. (Source: PCPER) Of course, the advancement of the capacity itself, the user may pay attention to the flash memory first factory to release larger capacity to drop the price of SSD. (Source: PCPER)
Samsung 2016 released Z-SSD and Key Value SSD technology, and the SZ985 solid-state hard drive using this technology is now published, claiming that data intensive jobs such as data centers and enterprise systems can handle large data analysis. The Z-SSD read delay time is 15 microseconds, approximately one of the NVME solid state drives. Key Value SSD can be stored directly without the need for multiple data.
Original link: https://www.eeboard.com/news/samsung-electronics/
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