Cooperation launches the S-band GaN device to maximize the efficiency of radar applications.

Coasdaq: Cree announced the launch of high efficiency GaN HEMT transistors available in military and commercial S-band radar. The novel S-band GaN HEMT transistor has a rated power between 3.1 to 3.5 GHz, which provides superior drain efficiency (near 70%) compared to conventional Si or GaAs MesFET devices. At the same time, the combination of high efficiency and high power density helps minimize heat dissipation requirements and reduce the size and weight of the commercial radar system application. Jim Milligan, director of Ke Rui Wireless RF (RF) and microwave department, said: "The new S-band GaN HEMT device has enriched the Kaigui high-efficiency S-band GaN transistor and single-chip microwave integrated circuit (MMIC) product line, thus Commercial radar system provides more choices in the application of high-power amplifying circuits. Efficient S-band GaN HEMT device rate, expand pulse capability while having excellent signal fidelity, and minimizes heat generation management requirements, so that it can help Wireless RF design engineers greatly reduce the size and weight of the radar system while expanding the application range and reducing installation costs. " Kui Rui CGH35060 GaN HEMT transistor 28V operating voltage is 60W (when the pulse is 100 microseconds), the power gain is 12 dB, the drain is 65%, 50% higher than the traditional silicon LDMOS device . The CGH35060 GaN device has been verified in the high power amplifier reference design (between the S-band frequency between 3.1 to 3.5 GHz). Compared to GaAs and Si technology, the CGH35060 also has a long pulse, high power performance (less than 0.6 dB), excellent signal fidelity and very low power attenuation. The new GaN Hemt transistor matches the full set of CD-bands, including CGH31240F / CGH35240F full match 240W GaN HEMT devices (2.7 - 2.9GHz / 3.1 - 3.5GHz) and CMPA2735075F 2-level package GaN HEMT single-chip microwave integrated circuit ( MMIC). For more information on the latest S-band GaN Hemt devices, please visit: www.cree.com.

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